| PART |
Description |
Maker |
| SPX2940 SPX2940T-1.8 SPX2940T-2.5 SPX2940T3-12.0 S |
128 x 128 pixel format, LED Backlight available 1A低压降稳压器
240 x 64 pixel format, CFL, LED, or EL Backlight available
128 x 128 pixel format, LED or EL Backlight available
1A Low Dropout Voltage Regulators
1A Low Dropout Voltage Regulator Fixed Output, Fast Response
1A Low Dropout Voltage Regulator, 3%
|
Ecliptek, Corp.
SIPEX[Sipex Corporation]
|
| BAS40-05T-7 BAS40-04T-7 BAS40-06T-7 BAS40T-7 BAS40 |
128 x 128 pixel format, LED or EL Backlight available
SURFACE MOUNT SCHOTTKY BARRIER DIODE
|
Diodes Inc.
Diodes Incorporated
|
| HEDM-6500-T08 HEDM-6500-U13 HEDM-6500-T06 HEDM-650 |
128 x 128 pixel format, LED or EL Backlight available
Large Diameter (56 mm), Housed Two and Three Channel Optical Enco 大口径（56毫米），外套二及中三通道光学恩科
240 x 64 pixel format, CFL, LED, or EL Backlight available 大口径（56毫米），外套二及中三通道光学恩科
SINGLE, 2 CHANNELS, ROTARY OPTICAL POSITION ENCODER
|
Agilent(Hewlett-Packard)
Agilent Technologies, Inc.
NXP Semiconductors N.V.
AGILENT TECHNOLOGIES INC
Agilent(Hewlett-Packard...
|
| BAS70-T1 Q62702A1173 BAS70T1 BAS70 Q62702A674 |
128 x 128 pixel format, LED or EL Backlight available
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| QRF1410T30 QRD1410T30 QR1410T30 QRC1410T30 |
Fast Recovery Diode Module (100 Amp/1400 Volts) 61 A, 1400 V, SILICON, RECTIFIER DIODE
128 x 128 pixel format, LED or EL Backlight available 快速恢复二极管模块100 Amp/1400伏特
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T |
240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只，引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| M2S56D20TP-75 M2V56D30TP-75 M2V56D20TP-75 M2S56D30 |
128 x 64 pixel format, LED Backlight available
256M Double Data Rate Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| QM30TX-H |
240 x 128 pixel format, LED or EL Backlight
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CT30TM-8 |
128 x 64 pixel format, LED Backlight available 130 A, 400 V, N-CHANNEL IGBT, TO-220F
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| AAT3220IGY-18-T1 AAT3220IGY-23-T1 AAT3220IGY-20-T1 |
150mA NanoPower LDO Linear Regulator
150mA NanoPower?/a> LDO Linear Regulator
150mA NanoPowerLDO Linear Regulator
CAP 8.0PF 50V .25 PF NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN
128 x 128 pixel format, LED or EL Backlight available 150mA的NanoPower⑩LDO线性稳压器
|
http://
Advanced Analogic Technologies, Inc.
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
